to ? 126 1. emitter 2. collector 3. base to-126 plastic-encapsulate transistors bd135/137/139 transistor (npn) features z high current z complement to bd136, bd138 and bd140 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bd135 bd137 BD139 v (br)cbo i c = 0.1ma,i e =0 45 60 80 v collector-emitter sustaining voltage bd135 bd137 BD139 v ceo(sus) * i c =0.03a,i b =0 45 60 80 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 10 a h fe(1) * v ce =2v, i c =150ma 40 250 h fe(2) * v ce =2v, i c =5ma 25 dc current gain h fe(3) * v ce =2v, i c =500ma 25 collector-emitter saturation voltage v ce(sat) * i c =500ma,i b =50ma 0.5 v base-emitter voltage v be * v ce =2v, i c =500ma 1 v *pulse test: pulse width 350 s, duty cycle 2.0%. classification of h fe(1) rank 6 10 16 range 40-100 63-160 100-250 symbol parameter value unit v cbo collector-base voltage bd135 bd137 BD139 45 60 80 v v ceo collector-emitter voltage bd135 bd137 BD139 45 60 80 v v ebo emitter-base voltage 5 v i c collector current 1.5 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
10 100 1000 0 50 100 150 200 250 300 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 1600 10 100 1000 400 600 800 1000 10 100 1000 0 50 100 150 200 250 300 350 0246810 0.0 0.1 0.2 0.3 0.4 400 600 800 1000 10 100 1000 v ce = 2v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? 1500 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =10 i c v besat ?? 1500 t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) 1500 BD139 common emitter t a =25 2ma 1.8ma 1.6ma 1.4ma 1.2ma 1ma 0.8ma 0.6ma 0.4ma i b =0.2ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic vce=2v ta=25 ta=100 o c base-emitter voltage v be (mv) collector current i c (ma) i c ??v be 1500 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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